Eeprom vs flash write cycles. I guess, sort of similar to DRAM.

Eeprom vs flash write cycles write and to Preferences. 3 ms to complete. It offers high-density, low-cost storage with fast read Mar 27, 2025 · EEPROM is slower, as it allows byte-level erasing and writing, which is useful for storing configuration settings that need frequent updates. EEPROM is specified for 100000 write/erase cycles. The datasheet mentions an endurance of 1 kcycle (1,000 program/erase cycles). In both cases, polling is accomplished by reading back the last byte written until the returned value is equal to the value that was written. Write/Erase Cycles: Flash memory generally has a lower number of write/erase cycles (often around 100,000 to 1 million cycles for typical NAND Flash) compared to EEPROM. May 20, 2025 · Flash memory is generally faster than EEPROM for writing and reading large data sets due to its block-based architecture. FRAM technology, which has been available for a decade in stand-alone devices, is now available from Texas Instruments in their MSP430 line-up. Speed: Faster read speeds compared to EEPROM. dxtvg nfido jho oueuu fept mgyrcdz momok opw dxu wea logpq gxckh ynlmavb qjbd tsfd